Lamp annealing system for rapid thermal process

Features . Outline

RLA-4100-V

Vacuum load-lock capability improves throughput.
Supports 6 to 8 inch various wafers including
Si, GaN, and SiC.

　

　

• • Vacuum load-lock is equipped as standard on the chamber and
    　 transport unit, for high throughput.
  • Includes an automated susceptor transfer function for SiC and GaN wafers.
  • Halogen lamps are installed in both an upper and lower cross.
  • 6 zone control allows easy control of the power ratio for each zone.
  • Non-contact measurement of workpiece temperature is performed using
    　 radiative thermometers, and feedback control is possible.

　

RLA-3100

Vacuum load-lock on the chamber and N₂ load-lock on
the transport unit improve throughput.
Supports various wafers including Si, GaN, and SiC.

　

　

• • Supports a wide range of wafer sizes up to 8 inches.
  • Includes an automated susceptor transfer function for SiC and GaN wafers.
  • Halogen lamps are installed in both an upper and lower cross.
  • 6 zone control allows easy control of the power ratio for each zone.
  • Non-contact measurement of workpiece temperature is performed using
    　 radiative thermometers, and feedback control is possible.

  　

  RLA-1200

  

  This lamp annealing system for 4-inch to 8-inch wafers
  achieves high-quality processing even for use in R&D.
  Activation and oxidation are available in a vacuum (LP)
  environment and N2 load-lock atmosphere.

  　

  • • High performance process with R&D
    • Low-cost system by manual susceptor transfer
    • Upper & lower cross lamp structure and soaking furnace improve the
      　 uniformity of in-plane temperature
    • 4- to 8-inch wafer size is available
    • Equipped with an operator-friendly high performance control system
    • Vacuum designed quartz tube enables accurate gas substitution and
      　 process at vacuum pressure